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RTR020N05
Transistors
2.5V Drive Nch MOS FET
RTR020N05
Structure
Silicon N-channel MOS FET
External dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
(3)
1) Low On-resistance.
2) Space saving , small surface mount package (TSMT3).
(1)
(2)
0~0.1
3) Low voltage drive (2.5V drive).
(1) Gate
0.95 0.95
1.9
0.16
Each lead has same dimensions
Applications
Switching
Packaging specifications and h FE
(2) Source
(3) Drain
Inner circuit
Abbreviated symbol : QF
Package
Taping
(3)
Type
Code
Basic ordering unit (pieces)
TL
3000
RTR020N05
(1)
? 1
? 2
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
45
12
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
P D ? 2
Tch
Tstg
± 2.0
± 8
0.8
8
1.0
150
? 55 to + 150
A
A
A
A
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
125
Unit
° C/W
? Mounted on a ceramic board
1/2
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